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| ? ! "!##$ % & ' () (' * ( " ( ' ) ) )') ? power management in notebook computer, portable equipment and battery powered systems p-channel mosfet g s d apm1401 handling code temp. range package code package code s : sc-70 operating junction temp. range c : -55 to 150 c handling code tr : tape & reel lead free code l : lead free device blank : original device apm1401 s : 01 lead free code top view of sc-70 ? -20v/-0.65a , r ds(on) =370m ? (typ.) @ v gs =-4.5v r ds(on) =550m ? (typ.) @ v gs =-2.5v ? ? ? ? ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? sc-70 package ? ? ? ? ? lead free available (rohs compliant) note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature. ? ! "!##$ ! (t a = 25 c unless otherwise noted) ! "# (t a = 25 c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage -20 v gss gate-source voltage 10 v i d * continuous drain current -0.65 i dm * 300 s pulsed drain current v gs =-4.5v -2.1 a i s * diode continuous forward current -0.5 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25c 0.34 p d * maximum power dissipation t a =100c 0.13 w r ja * thermal resistance-junction to ambient 360 c/w note: *surface mounted on 1in 2 pad area, t 10sec. apm1401s symbol parameter test condition min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =-250 a -20 v -1 i dss zero gate voltage drain current v ds =-16v,v gs =0v t j =85 c -30 v gs(th) gate threshold voltage v ds =v gs , i ds =-250 a -0.5 -0.7 -1 v i gss gate leakage current v gs =10v, v ds =0v 100 na v gs =-4.5v, i ds =-0.65a 370 480 r ds(on) a drain-source on-state resistance v gs =-2.5v, i ds =-0.45a 550 720 m ? g fs forward transconductance v ds =-10v, i ds =-0.65a 6.5 s v sd a diode forward voltage i sd =-0.5a, v gs =0v -0.8 -1.3 v dynamic characteristics b c iss input capacitance 136 c oss output capacitance 38 c rss reverse transfer capacitance v gs =0v, v ds =-15v, frequency=1.0mhz 26 pf ? ! "!##$ + notes: a : pulse test ; pulse width 300 s, duty cycle 2 %. b : guaranteed by design, not subject to production testing. apm1401s symbol parameter test condition min. typ. max. unit t d(on) turn-on delay time 5 10 t r turn-on rise time 8 12 t d(off) turn-off delay time 9.6 15 t f turn-off fall time v dd =-10v, r l =10 ? , i ds =-1a, v gen =-4.5v, r g =6 ? 5 15 ns gate charge characteristics b q g total gate charge 7.4 9.6 q gs gate-source charge 1.1 q gd gate-drain charge v ds =-10v, v gs =-4.5v, i ds =-0.65a 1.2 nc ! "# $" %& (t a = 25 c unless otherwise noted) ? ! "!##$ , 1e-4 1e-3 0.01 0.1 10 100 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 360 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 '( "# -i d - drain current (a) drain current t j - junction temperature ( c) safe operation area -v ds - drain - source voltage (v) thermal transient impedance square wave pulse duration (sec) power dissipation p tot - power (w) t j - junction temperature ( c) -i d - drain current (a) 0 20406080100120140160 0.00 0.08 0.16 0.24 0.32 0.40 t a =25 o c 0 20406080100120140160 0.0 0.2 0.4 0.6 0.8 t a =25 o c, v g =4.5v 0.1 1 10 50 0.01 0.1 1 5 rds(on) limit 1s t a =25 o c 10ms 1ms 100ms dc normalized transient thermal resistance ? ! "!##$ $ r ds(on) - on - resistance ( ? ) drain-source on resistance -i d - drain current (a) t j - junction temperature ( c) gate threshold voltage normalized threshold voltage -v ds - drain - source voltage (v) -i d - drain current (a) output characteristics transfer characteristics -v gs - gate - source voltage (v) -i d - drain current (a) '( "# $" %& 012345 0.0 0.5 1.0 1.5 2.0 2.5 -2 .5v -1 .5v -2 v v gs = -3 th ru -1 0 v 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v gs = -2.5v v gs = -4.5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.5 1.0 1.5 2.0 2.5 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 i ds = -250 a ? ! "!##$ - -v ds - drain - source voltage (v) drain-source on resistance normalized on resistance t j - junction temperature ( c) c - capacitance (pf) -v sd - source - drain voltage (v) source-drain diode forward -i s - source current (a) capacitance gate charge q g - gate charge (nc) -v gs - gate-source voltage (v) '( "# $" %& -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @tj = 25 c : 370m ? v gs = -4.5v i ds = -0.8a 0.0 0.4 0.8 1.2 1.6 0.01 0.1 1 3 t j =150 o c t j =25 o c 0 2 4 6 8 10 12 14 16 18 20 0 50 100 150 200 250 frequency=1mhz crss coss ciss 0123456789 0 1 2 3 4 5 v ds = -10v i ds = -0.8a ? ! "!##$ . dimensions in millimeters dimensions in inches symbol min. max. min. max. a 0.900 1.100 0.035 0.043 a1 0.000 0.100 0.000 0.004 a2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 d 2.000 2.200 0.079 0.087 e 1.150 1.350 0.045 0.053 e1 2.150 2.450 0.085 0.096 e 0.650typ 0.026typ e1 1.200 1.400 0.047 0.055 l 0.525ref 0.021pef l1 0.260 0.460 0.010 0.018 0 8 0 8 sc-70 e e1 d b e1 a2 a a1 e l c l1 0.20 ? ! "!##$ / terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p )" (ir/convection or vpr reflow) " ) #( profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature max (tsmax) time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: temperature (t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface. ? ! "!##$ 0 test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles (' table 1. snpb entectic process ? package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 2.5 mm 225 +0/-5 c 225 +0/-5 c table 2. pb-free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. " ' * t ao e w po p ko bo d1 d f p1 " ) $" %& ? ! "!##$ %# " + anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 "+ ' application carrier width cover tape width devices per reel sc- 70 8 5.3 3000 application a b c j t1 t2 w p e 178 1 14.4 0.4 13.0 + 0.2 1.15 0.1 12. 0.2 2.8 0.2 8.0+ 0.3 - 0.1 4 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sc-70 3.5 0.05 1.55 0.05 1.00 +0.25 4.0 0.1 2.0 0.05 2.4 0.1 2.4 0.1 1.19 0.1 0.25 0.013 " ' * $" %& a j b t2 t1 c |
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